Bipolar resistive switching in amorphous calcium zirconate memristors

We report the bipolar resistive switching characteristics of a simple two-terminal memristor based on an amorphous calcium zirconate (a-CaZrO3) thin film. The device, in a Au/a-CaZrO3/FTO configuration, demonstrated reliable and reproducible switching at low operating voltages (± 1 V). The memristor exhibits stable performance metrics, including a reliable endurance over $$1.2 \times 10^5$$ cycles, stable data retention for over $$5.5 \times 10^3$$ s, and reliable cycle-to-cycle and device-to-device uniformity. Analysis of the current-voltage characteristics suggests a switching mechanism governed by the formation and rupture of oxygen vacancy-based conductive filaments, a model strongly supported by X-ray photoelectron spectroscopy. These findings highlight amorphous CaZrO3 as a promising material for memristor based Boolean logic circuits and data encryption.