Reliability assessment of Z-shaped gate TFET under interface trap charges and thermal variations for low-power applications

Researchers have evaluated the reliability of Z-shaped gate Tunnel Field-Effect Transistors (TFETs) for low-power applications. The study specifically examined how interface trap charges and temperature fluctuations impact the performance of these transistors. Understanding these factors is crucial for ensuring consistent operation in energy-efficient electronic devices.

This research is important for developing more dependable and efficient transistors for low-power electronics, which are vital for battery-operated devices and the Internet of Things.