Gamma-irradiation-induced modification of hopping conductivity in (TlInSe2)0.9(TlGaTe2)0.1 solid solution
Gamma ışınlaması ile muamele edilen TlInSe2-TlGaTe2 katı çözelti sisteminde elektriksel iletkenlik özelliklerinde meydana gelen değişimler incelenmiştir. Çalışma, ışınlama ile indüklenen kusurların malzemenin hoppingsel iletkenliğine etkisini ortaya koymuştur.
Researchers have investigated the electrical conductivity changes in a (TlInSe2)0.9(TlGaTe2)0.1 solid solution after gamma irradiation. The study focused on how irradiation-induced defects influence the material's hopping conductivity. The findings reveal that gamma rays significantly alter the electrical properties of this specific solid solution. This suggests a potential for tuning the conductivity of such materials through controlled irradiation.
Understanding how gamma irradiation affects the electrical conductivity of this material is important for its potential applications in radiation-hardened electronic components or for developing new semiconductor materials with tailored properties.
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