Strain-engineered Ge-source double-gate TFET with Si/SiGe/Si channel for low-power and THz frequency applications

Researchers have developed a novel germanium-source double-gate tunnel field-effect transistor (TFET) incorporating a silicon/silicon-germanium/silicon channel. This innovative design utilizes strain engineering to enhance performance characteristics. The device is specifically engineered for applications requiring both low power consumption and operation at terahertz frequencies.

This advancement is significant for enabling next-generation low-power electronics and high-speed communication systems operating in the THz spectrum.